In this paper, a new tunneling field effect transistor with comb-shaped gate (CG-TFET) is proposed and experimentally demonstrated. Source implantation masked by the comb-shaped gate can result in combshaped channel region. With this comb-shaped gate configuration, increased tunneling area can be obtained and hence higher on-state current without area penalty. Moreover, an optimized CG-TFET with silicide source is fabricated to further improve the on-state current by introducing Schottky barrier tunneling current which is much more efficient than band-to-band tunneling. In addition, the electron barrier in the comb-shaped channel region is raised due to the self depleted effect, which can effectively suppress the Schottky injection leakage from the silicide source in the off-state. 1.5 orders of magnitude higher than conventional TFET with the same footprint on-state current and more than 106 on-off current ratio can be achieved.