Regulation Active Sites of Porous GaN Crystal Via Mn_3O_4 Nanosheets for Advanced High Temperature Energy Storage
Gallium nitride(GaN) single crystal with prominent electron mobility and heat resistance have great potential in the high tem...
机 构:
Institute of Novel Semiconductors, State Key Lab of Crystal Materials,Shandong University；Shandong Research Institute of Industrial Technology；School of Life Sciences, Shandong First Medical University&Shandong Academy of Medical Sciences；Key Laboratory of Processing and Testing Technology of Glass&Functional Ceramics of Shandong Province, School of Materials Science and Engineering, Qilu University of Technology(Shandong Academy of Sciences)；
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Energy & Environmental Materials
2025年03期
